High peak power picoseconds optical pulse generation from GaInN semiconductor diode lasers

Rintaro Koda, Tomoyuki Oki, Takao Miyajima, Hideki Watanabe, Shunsuke Kono, Masaru Kuramoto, Masao Ikeda, Hiroyuki Yokoyama

研究成果: Conference contribution

2 被引用数 (Scopus)

抄録

We present optical pulse generation with 100 W peak power, 3 ps temporal duration, and 1 GHz repetition from a GaInN master oscillator power amplifier (MOPA). An external cavity GaInN laser diode is passively mode-locked to generate 4 W peak power optical pulses as a master oscillator, and a semiconductor optical amplifier (SOA) effectively amplified these to a high peak power of more than 100 W. Two major factors that contributed to effective amplification of optical pulses were the generation of clean optical pulses without sub-pulse components by the GaInN mode-locked laser diode and suppression of amplified spontaneous emission in the SOA. This novel high-peak-power pulse source is used to induce multi-photon absorption to create sub-micrometer recording marks in a bulk plastic recording media. The realization of an all-semiconductor pulse source is a significant breakthrough towards a practical 3D optical data storage system.

本文言語English
ホスト出版物のタイトルNovel In-Plane Semiconductor Lasers X
7953
DOI
出版ステータスPublished - 2011 3月 31
イベントNovel In-Plane Semiconductor Lasers X - San Francisco, CA, United States
継続期間: 2011 1月 252011 1月 28

Other

OtherNovel In-Plane Semiconductor Lasers X
国/地域United States
CitySan Francisco, CA
Period11/1/2511/1/28

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • コンピュータ サイエンスの応用
  • 応用数学
  • 電子工学および電気工学

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