High-mobility two-dimensional electron gas in an undoped heterostructure: Mobility enhancement after illumination

Tadashi Saku, Koji Muraki, Yoshiro Hirayama

研究成果: Article査読

17 被引用数 (Scopus)

抄録

High-mobility two-dimensional electron gas (2DEG) is formed at an undoped GaAs/AlGaAs inverted heterointerface through the field-effect using a back-gate. Despite the structure being undoped, mobility enhancement is observed at 1.6 K after illumination. This suggests effective reduction of background impurity scattering by illumination. The maximum mobility reached after illumination, 5×106cm2/V·s, is the highest value ever reported for gated undoped heterostructures, including both normal- and inverted-type structures. This mobility is also the highest ever reported for inverted GaAs/AlGaAs heterostructures.

本文言語English
ページ(範囲)L765-L767
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
37
7 PART A
出版ステータスPublished - 1998 7月 1
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(その他)
  • 物理学および天文学(全般)

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