High-Mobility Sm-Doped Bi2Se3 Ferromagnetic Topological Insulators and Robust Exchange Coupling

Taishi Chen, Wenqing Liu, Fubao Zheng, Ming Gao, Xingchen Pan, Gerrit Van Der Laan, Xuefeng Wang, Qinfang Zhang, Fengqi Song, Baigeng Wang, Baolin Wang, Yongbing Xu, Guanghou Wang, Rong Zhang

研究成果: Article査読

37 被引用数 (Scopus)

抄録

High-mobility (SmxBi1-x)2Se3 topological insulators (with x = 0.05) show a Curie temperature of about 52 K, and the carrier concentration and Fermi wave vector can be manipulated by intentional Te introduction with no significant influence on the Curie temperature. The origin of the ferromagnetism is attributed to the trivalent Sm dopant, as confirmed by X-ray magnetic circular dichroism and first-principles calculations. The carrier concentration is on the order of 1019 cm-3 and the mobility can reach about 7200 cm2 V-1 s-1 with pronounced Shubnikov-de Haas oscillations.

本文言語English
ページ(範囲)4823-4829
ページ数7
ジャーナルAdvanced Materials
27
33
DOI
出版ステータスPublished - 2015 9月 1
外部発表はい

ASJC Scopus subject areas

  • 材料科学(全般)
  • 材料力学
  • 機械工学

フィンガープリント

「High-Mobility Sm-Doped Bi2Se3 Ferromagnetic Topological Insulators and Robust Exchange Coupling」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル