High-mobility field-effect transistor based on crystalline ZnSnO3 thin films

研究成果: Article査読

3 被引用数 (Scopus)

抄録

We propose crystalline ZnSnO3 as a new channel material for field-effect transistors. By molecular-beam epitaxy on LiNbO3(0001) substrates, we synthesized films of ZnSnO3, which crystallizes in the LiNbO3-type polar structure. Field-effect transistors on ZnSnO3 exhibit n-type operation with field-effect mobility of as high as 45 cm2V-1s-1 at room temperature. Systematic examination of the transistor operation for channels with different Zn/Sn compositional ratios revealed that the observed high-mobility reflects the nature of stoichiometric ZnSnO3 phase. Moreover, we found an indication of coupling of transistor characteristics with intrinsic spontaneous polarization in ZnSnO3, potentially leading to a distinct type of polarization-induced conduction.

本文言語English
論文番号055327
ジャーナルAIP Advances
8
5
DOI
出版ステータスPublished - 2018 5 1

ASJC Scopus subject areas

  • 物理学および天文学(全般)

フィンガープリント

「High-mobility field-effect transistor based on crystalline ZnSnO<sub>3</sub> thin films」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル