High-mobility electronic transport in ZnO thin films

A. Tsukazaki, A. Ohtomo, M. Kawasaki

研究成果: Article査読

82 被引用数 (Scopus)

抄録

A systematic study of electronic transport properties was carried out for ZnO thin films grown on high-temperature annealed buffer layers of semi-insulating Mg0.15 Zn0.85 O. As functions of growth temperature and oxygen pressure during laser molecular-beam epitaxy growth, there can be seen optimum growth conditions where gross concentration of intrinsic defects is thought to be reduced. For the best qualified film, Hall mobilities of 5000 cm2 V-1 s-1 at 100 K and 440 cm2 V-1 s-1 at 300 K were recorded with the residual electron densities of 4× 1014 and 9× 1015 cm-3, respectively.

本文言語English
論文番号152106
ジャーナルApplied Physics Letters
88
15
DOI
出版ステータスPublished - 2006 4 10

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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