TY - GEN
T1 - High Light Power Density DUV-LED Packaging Using High Density TSV in Silicon Cavity and Laser-Glass-Frit-Bonded Glass Cap
AU - Chiba, Hirofumi
AU - Suzuki, Yukio
AU - Yasuda, Yoshiaki
AU - Gong, Tianjiao
AU - Tanaka, Shuji
N1 - Funding Information:
Authors are grateful to Ms. Nakagawa, Kiyokawa Electroplating Industry Co., Ltd. and Mr. Shiragami, Nippon Electric Glass Co., Ltd. for skillful process optimization.
Funding Information:
A major part of the manufacturing process was done using a common facility in Microsystem Integration Center, Tohoku University, which is partly supported by the Ministry of Education, Culture, Sports, Science and Technology’s Nanotechnology Platform Program. Authors are grateful to Ms. Nakagawa, Kiyokawa Electroplating Industry Co., Ltd. and Mr. Shiragami, Nippon Electric Glass Co., Ltd. for skillful process optimization.
Publisher Copyright:
© 2021 IEEE.
PY - 2021/6/20
Y1 - 2021/6/20
N2 - This paper reports an improved deep ultraviolet LED (DUV-LED) packaging based on Si MEMS process technology. The Si package (Si-PKG) consists of a cavity formed by Si crystalline anisotropic wet etching and through-silicon vias (TSV) filled with electroplated Cu. The Si-PKG is hermetically sealed by laser local heating of screen-printed glass frit. This technology allows for the use of a DUV-transparent glass substrate, which has an unmatched coefficient of thermal expansion (CTE). Using a high-density array of TSV capped with AuSn solder bumps, the cooling performance of the DUV-LED has been greatly improved. As a result, an optical output of 114% (50 mW) and a volumetric light power density of 380% (14 mW/mm3) were recorded compared with the conventional AlN-packaged device. The developed compact low-cost Si-PKG is promising for wider applications of the DUV-LED including the disinfection of the new coronaviruses.
AB - This paper reports an improved deep ultraviolet LED (DUV-LED) packaging based on Si MEMS process technology. The Si package (Si-PKG) consists of a cavity formed by Si crystalline anisotropic wet etching and through-silicon vias (TSV) filled with electroplated Cu. The Si-PKG is hermetically sealed by laser local heating of screen-printed glass frit. This technology allows for the use of a DUV-transparent glass substrate, which has an unmatched coefficient of thermal expansion (CTE). Using a high-density array of TSV capped with AuSn solder bumps, the cooling performance of the DUV-LED has been greatly improved. As a result, an optical output of 114% (50 mW) and a volumetric light power density of 380% (14 mW/mm3) were recorded compared with the conventional AlN-packaged device. The developed compact low-cost Si-PKG is promising for wider applications of the DUV-LED including the disinfection of the new coronaviruses.
KW - Deep ultraviolet LED (DUV-LED)
KW - Hermetic sealing
KW - Through-silicon via (TSV)
KW - Wafer-level packaging
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U2 - 10.1109/Transducers50396.2021.9495422
DO - 10.1109/Transducers50396.2021.9495422
M3 - Conference contribution
AN - SCOPUS:85114964098
T3 - 21st International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2021
SP - 1162
EP - 1165
BT - 21st International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2021
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 21st International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2021
Y2 - 20 June 2021 through 25 June 2021
ER -