High-k/metal gate system and related issues

Masaaki Niwa

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

Key factors on Hf-based high-k/metal gate (HK/MG) CMOS technology based on conventional gate first process for low operational power application are overviewed. WF tuning derived from ionic property of HK material, process cost, EOT scaling under defect free interface as well as low gate leakage current are issues to be overcome. The most important item is how to control the atomic distribution in the Hf-based HK/MG system, which is requisite for the importunate WF tuning and EOT scaling.

本文言語English
ホスト出版物のタイトルProceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
編集者Jia Zhou, Ting-Ao Tang
出版社Institute of Electrical and Electronics Engineers Inc.
ISBN(電子版)9781479932962
DOI
出版ステータスPublished - 2014 1 23
イベント2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 - Guilin, China
継続期間: 2014 10 282014 10 31

出版物シリーズ

名前Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014

Other

Other2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
CountryChina
CityGuilin
Period14/10/2814/10/31

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Computer Science Applications

フィンガープリント 「High-k/metal gate system and related issues」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル