High insulating quality Ca F2 pseudomorphic films on Si(111)

N. S. Sokolov, A. K. Kaveev, A. V. Krupin, S. E. Tyaginov, M. I. Vexler, S. Ikeda, K. Tsutsui, K. Saiki

研究成果: Article査読

6 被引用数 (Scopus)

抄録

Current-voltage characteristics of epitaxially grown AuCa F2 Si (111) metal-insulator-semiconductor structures with thin (1.5-6 nm) pseudomorphic fluoride layer have been studied. It was found that Ca F2 films in these structures are of better insulating quality than those in the devices reported previously. Typical breakdown field for the fluorite layers was about 8× 106 Vcm and the tunnel current did not exceed the values predicted by simulations with realistic parameters.

本文言語English
論文番号142909
ジャーナルApplied Physics Letters
90
14
DOI
出版ステータスPublished - 2007
外部発表はい

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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