High-energy-resolution photoemission study of and

H. Kumigashira, A. Chainani, T. Yokoya, O. Akaki, T. Takahashi, M. Ito, M. Kasaya, O. Sakai

研究成果: Article査読

6 被引用数 (Scopus)

抄録

We studied the electronic structure of isostructural (Formula presented) and (Formula presented) using high-resolution low-temperature photoemission spectroscopy. (Formula presented) is a typical valence fluctuation material, while (Formula presented) is a low (Formula presented)(∼10 K) heavy-fermion system. The valence-band spectra show that Ni 3d derived states appear at energies closer to the Fermi level ((Formula presented)) compared to the Pt 5d derived states. The near-(Formula presented) spectra exhibit the characteristic spin-orbit splitting of 4f states (4(Formula presented) and 4(Formula presented)), with higher 4(Formula presented) intensity in (Formula presented) than in (Formula presented). Numerical simulations based on the single-impurity Anderson model show that the hybridization between the conduction band and f electrons is stronger in (Formula presented) than in (Formula presented). This is qualitatively understood in terms of proximity of Ni 3d states to the f level. The obtained spectroscopic results were discussed in comparison with transport and magnetic measurements.

本文言語English
ページ(範囲)2565-2568
ページ数4
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
53
5
DOI
出版ステータスPublished - 1996

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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