A new type of superluminescent diode (SLD) with a tapered waveguide in the absorbing region is proposed. This SLD structure quite suitably monitors output power, as it emits monitor light from the rear facet that is about one-tenth the output power from the front one. Device parameters have been determined by beam propagation methods. A 1.3μm SLD fabricated by liquid phase epitaxy (LPE) with an absorbing waveguide 200μm long and with a 6.5° tapered angle can emit output power of 13.5 mW from the front facet at a 200 mA driving current without lasing.
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