High-density electrostatic carrier doping in organic single-crystal transistors with polymer gel electrolyte

J. Takeya, K. Yamada, K. Hara, K. Shigeto, K. Tsukagoshi, S. Ikehata, Y. Aoyagi

研究成果: Article査読

91 被引用数 (Scopus)

抄録

High-density carrier accumulation in organic semiconductors is demonstrated in Au/polymer gel electrolyte/rubrene crystal/SiO2/doped Si dual-gate transistors, forming electric double layers in the polymer gel. Application of only 1.2V across the polymer gel electrolyte drastically enhances the conductance of the rubrene single crystal with the field-induced carrier density up to ∼5 × 1013 cm-2. Directly comparing the transfer characteristics of the same device channel in the dual-gate transistors revealed that the achieved doping level is beyond the maximum of the SiO2-based transistor on the opposite side of the organic crystal.

本文言語English
論文番号112102
ジャーナルApplied Physics Letters
88
11
DOI
出版ステータスPublished - 2006
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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