High-density electrostatic carrier doping in organic single-crystal transistors with polymer gel electrolyte

J. Takeya; K. Yamada; K. Hara; K. Shigeto; K. Tsukagoshi; S. Ikehata; Y. Aoyagi

doi:10.1063/1.2186513

High-density electrostatic carrier doping in organic single-crystal transistors with polymer gel electrolyte

J. Takeya, K. Yamada, K. Hara, K. Shigeto, K. Tsukagoshi, S. Ikehata, Y. Aoyagi

研究成果: Article › 査読

91 被引用数 (Scopus)

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High-density carrier accumulation in organic semiconductors is demonstrated in Au/polymer gel electrolyte/rubrene crystal/SiO₂/doped Si dual-gate transistors, forming electric double layers in the polymer gel. Application of only 1.2V across the polymer gel electrolyte drastically enhances the conductance of the rubrene single crystal with the field-induced carrier density up to ∼5 × 10¹³ cm^-2. Directly comparing the transfer characteristics of the same device channel in the dual-gate transistors revealed that the achieved doping level is beyond the maximum of the SiO₂-based transistor on the opposite side of the organic crystal.

本文言語	English
論文番号	112102
ジャーナル	Applied Physics Letters
巻	88
号	11
DOI	https://doi.org/10.1063/1.2186513
出版ステータス	Published - 2006
外部発表	はい

ASJC Scopus subject areas

物理学および天文学（その他）

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10.1063/1.2186513

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title = "High-density electrostatic carrier doping in organic single-crystal transistors with polymer gel electrolyte",

abstract = "High-density carrier accumulation in organic semiconductors is demonstrated in Au/polymer gel electrolyte/rubrene crystal/SiO2/doped Si dual-gate transistors, forming electric double layers in the polymer gel. Application of only 1.2V across the polymer gel electrolyte drastically enhances the conductance of the rubrene single crystal with the field-induced carrier density up to ∼5 × 1013 cm-2. Directly comparing the transfer characteristics of the same device channel in the dual-gate transistors revealed that the achieved doping level is beyond the maximum of the SiO2-based transistor on the opposite side of the organic crystal.",

author = "J. Takeya and K. Yamada and K. Hara and K. Shigeto and K. Tsukagoshi and S. Ikehata and Y. Aoyagi",

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AU - Takeya, J.

AU - Yamada, K.

AU - Hara, K.

AU - Shigeto, K.

AU - Tsukagoshi, K.

AU - Ikehata, S.

AU - Aoyagi, Y.

N1 - Funding Information: The authors would like to thank H. Shimotani and Y. Iwasa for their fruitful discussions and Y. Kobayashi and S. Seki for their technical assistance. This study was supported in part by Grants-in-Aid for Scientific Research (No. 16740214 and No. 17069003) from the Ministry of Education, Culture, Sports, Science, and Technology, Japan.

PY - 2006

Y1 - 2006

N2 - High-density carrier accumulation in organic semiconductors is demonstrated in Au/polymer gel electrolyte/rubrene crystal/SiO2/doped Si dual-gate transistors, forming electric double layers in the polymer gel. Application of only 1.2V across the polymer gel electrolyte drastically enhances the conductance of the rubrene single crystal with the field-induced carrier density up to ∼5 × 1013 cm-2. Directly comparing the transfer characteristics of the same device channel in the dual-gate transistors revealed that the achieved doping level is beyond the maximum of the SiO2-based transistor on the opposite side of the organic crystal.

AB - High-density carrier accumulation in organic semiconductors is demonstrated in Au/polymer gel electrolyte/rubrene crystal/SiO2/doped Si dual-gate transistors, forming electric double layers in the polymer gel. Application of only 1.2V across the polymer gel electrolyte drastically enhances the conductance of the rubrene single crystal with the field-induced carrier density up to ∼5 × 1013 cm-2. Directly comparing the transfer characteristics of the same device channel in the dual-gate transistors revealed that the achieved doping level is beyond the maximum of the SiO2-based transistor on the opposite side of the organic crystal.

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High-density electrostatic carrier doping in organic single-crystal transistors with polymer gel electrolyte

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