High density and high reliability chain FeRAM with damage-robust MOCVD-PZT capacitor with SrRuO3/IrO2 top electrode for 64Mb and beyond

O. Hidaka, T. Ozaki, H. Kanaya, Y. Kumura, Y. Shimojo, S. Shuto, Y. Yamada, K. Yahashi, K. Yamakawa, S. Yamazaki, D. Takashima, T. Miyakawa, S. Shiratake, S. Ohtsuki, I. Kunishima, A. Nitayama

研究成果: Conference contribution

9 被引用数 (Scopus)

抄録

An excellent 64Mb chainFeRAM using a highly reliable capacitor with damage-robust MOCVD-PZT and SrRuO3/IrO2 top electrode (TE) is successfully demonstrated for the first time. A very large signal margin of 540mV at 1.8V is achieved for the capacitor as small as 0.19μm2. Large sensing margin is well maintained after 85°C storage, and 10 years lifetime is successfully guaranteed. The combination of damage-robust MOCVD-PZT and optimized SrRuO3/IrO2 TE as well as a sophisticated 'chain' structure that has a small bit line capacitance (Cb) nature shows excellent reliability and scalability. This work demonstrates that high density 256Mb chain FeRAM with 0.1μm2 planar capacitor can be realized.

本文言語English
ホスト出版物のタイトル2006 Symposium on VLSI Technology, VLSIT - Digest of Technical Papers
ページ126-127
ページ数2
出版ステータスPublished - 2006 12 1
イベント2006 Symposium on VLSI Technology, VLSIT - Honolulu, HI, United States
継続期間: 2006 6 132006 6 15

出版物シリーズ

名前Digest of Technical Papers - Symposium on VLSI Technology
ISSN(印刷版)0743-1562

Other

Other2006 Symposium on VLSI Technology, VLSIT
国/地域United States
CityHonolulu, HI
Period06/6/1306/6/15

ASJC Scopus subject areas

  • 電子工学および電気工学

フィンガープリント

「High density and high reliability chain FeRAM with damage-robust MOCVD-PZT capacitor with SrRuO<sub>3</sub>/IrO<sub>2</sub> top electrode for 64Mb and beyond」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

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