High Aspect Ratio Silicon Structures Produced via Metal-Assisted Chemical Etching and Assembly Technology for Cantilever Fabrication

研究成果: Article査読

18 被引用数 (Scopus)

抄録

This paper presents a metal-assisted chemical etching (MACE) method for high aspect silicon structures. Ultrahigh aspect trenches and pillars of 400 and 80, respectively, have been achieved using MACE. A survey of the MACE method investigated the etching time, pattern sizes, and concentration of etching solution. In addition, a comparison of the etching methods related to the etching depth, surface roughness, and aspect ratio structure, etc., between the deep reactive ion etching and MACE methods has been reported. A simple method for cantilever fabrication has been proposed and demonstrated. Cantilever-based pillars fabricated by MACE were successfully produced via an assembly technology. The pillars were assembled onto a glass substrate and fixed with a conductive glue. The fabricated cantilever showed a resonance frequency of 235 kHz and a quality factor of 800.

本文言語English
論文番号7801054
ページ(範囲)567-573
ページ数7
ジャーナルIEEE Transactions on Nanotechnology
16
4
DOI
出版ステータスPublished - 2017 7

ASJC Scopus subject areas

  • Computer Science Applications
  • Electrical and Electronic Engineering

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