Hf-based high-k gate dielectric processing

Masaaki Niwa

研究成果: Chapter

抄録

This chapter focuses on the processing of Hf-based high-k gate dielectric film and its device fabrication to improve its electrical properties. First, the formation process of Hf-based high-k dielectric thin film is introduced followed by detail study of these films from the materials science point of view, such as its crystallization and its control, carrier trapping and doping effect on the bulk high-k film. Finally, the device processing of the Field Effect Transistor including the CMOSFET with Hf-based high-k gate dielectric and metal gate electrode is discussed.

本文言語English
ホスト出版物のタイトルSpringer Series in Advanced Microelectronics
出版社Springer-Verlag
ページ183-234
ページ数52
DOI
出版ステータスPublished - 2013 9 24

出版物シリーズ

名前Springer Series in Advanced Microelectronics
43
ISSN(印刷版)1437-0387

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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