Heterointerfaces: Atomic structures, electronic states, and related properties

Zhongchang Wang, Mitsuhiro Saito, Susumu Tsukimoto, Yuichi Ikuhara

    研究成果: Review article査読

    7 被引用数 (Scopus)

    抄録

    Recent breakthroughs in transmission electron microscopy enable a direct quantitative determination of the technologically significant heterointerfaces, yet a direct interpretation is not always possible. Here, we review the general processes to introduce the high-precision first-principles calculations into the microscopy in order to obtain an atomistic understanding of effects of buried interfaces on a wide range of properties. We demonstrate the possibility and important advance of this combined method in relating interface structures to device physics even for the complex heterointerfaces, SiC/Ti3SiC 2, LaxSr1-xO/(SrTiO3)n, and Pd/ZnO presented here. We therefore believe that this approach should be widely applicable to many other interfaces and a range of materials, providing new insights into many long-standing unresolved issues regarding interfaces.

    本文言語English
    ページ(範囲)783-793
    ページ数11
    ジャーナルJournal of the Ceramic Society of Japan
    119
    1395
    DOI
    出版ステータスPublished - 2011 11月

    ASJC Scopus subject areas

    • セラミックおよび複合材料
    • 化学 (全般)
    • 凝縮系物理学
    • 材料化学

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