Heteroepitaxial growth of rutile TiO2 on GaN(0001) by pulsed laser deposition

Taro Hitosugi, Yasushi Hirose, Junpei Kasai, Yutaka Furubayashi, Makoto Ohtani, Kiyomi Nakajima, Toyohiro Chikyow, Toshihiro Shimada, Tetsuya Hasegawa

研究成果: Article査読

20 被引用数 (Scopus)

抄録

Rutile TiO2(100) thin films have been grown on GaN(0001) surfaces by using the pulsed laser deposition method. Reflection high-energy electron diffraction (RHEED) measurements during the deposition clearly revealed the layer-by-layer growth of TiO2 at a substrate temperature of 400°C under an oxygen pressure of 1 × 10-5Torr. X-ray diffraction and atomic force microscopy confirmed that the obtained films have high crystallinity with atomically flat surfaces. Pole figure measurements revealed the epitaxial relationship between TiO2 and GaN, namely that the in-plane TiO2〈010〉 axis aligns parallel to the GaN〈101̄0〉

本文言語English
ページ(範囲)L1503-L1505
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
44
50-52
DOI
出版ステータスPublished - 2005 12月 16

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(その他)
  • 物理学および天文学(全般)

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