Heteroepitaxial growth of metastable ErF3 on AaF2(1 1 1) by molecular beam epitaxy: A novel material for optical upconversion

K. Inaba, K. Adachi, T. Yao, S. Uda, A. Kasuya, Tetsuo Taniuchi, T. Fukuda

研究成果: Article査読

1 被引用数 (Scopus)

抄録

The heteroepitaxial growth of hexagonal ErF3 onto CaF2(1 1 1) substrates using the molecular beam epitaxy (MBE) method is reported for the first time. Results of the X-ray rocking-curve (XRC) analyses showed the presence of the epitaxial relationship as (0 0 0 1)ErF3∥(1 1 1)CaF2. Reflection high-energy electron diffraction (RHEED) investigation suggests the growth of hexagonal metastable ErF3 with the epitaxial relationship of (0 0 0 1)ErF3∥(1 1 1)CaF2, (0 1 1 0)ErF3∥(1 1 2)CaF2, (2 1 1 0)ErF3∥(0 1 1)CaF2. Detailed analysis of RHEED pattern elucidates that the metastable ErF3 has the space group setting of P63/mmc, and among the several models proposed for LaF3-type structure, this setting is the unique one which is consistent with the observation of RHEED patterns. The up-conversion property of ErF3 for green-light emission (λ = 538 nm) pumped by an AlGaAs diode laser (λ = 798 nm) is investigated.

本文言語English
ページ(範囲)488-494
ページ数7
ジャーナルJournal of Crystal Growth
179
3-4
DOI
出版ステータスPublished - 1997 8月
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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