TY - JOUR
T1 - Helicon-wave-excited plasma sputtering deposition of Ga-doped ZnO transparent conducting films
AU - Sugiyama, Mutsumi
AU - Murayama, Akira
AU - Imao, Takashi
AU - Saiki, Keita
AU - Nakanishi, Hisayuki
AU - Chichibu, Shigefusa F.
PY - 2006/9/1
Y1 - 2006/9/1
N2 - Sputtering deposition of Ga-doped ZnO (ZnO: Ga) thin films was carried out using the helicon-waveexcited plasma sputtering (HWPS) method. The films sputtered above 150°C had a preferential {0001} orientation. According to the surface-damage-free nature, the films having featureless surface morphology exhibited an optical transmittance greater than 80% in the visible spectral wavelengths. However, because the deposition temperature was limited to 250°C, the electron mobility was limited to as low as 2-3 cm 2/V s due to the small grain size (∼25 nm). The results indicate that ZnO:Ga films deposited by HWPS can be used in the transparent conducting oxide layer, provided that higher electron mobility is achieved.
AB - Sputtering deposition of Ga-doped ZnO (ZnO: Ga) thin films was carried out using the helicon-waveexcited plasma sputtering (HWPS) method. The films sputtered above 150°C had a preferential {0001} orientation. According to the surface-damage-free nature, the films having featureless surface morphology exhibited an optical transmittance greater than 80% in the visible spectral wavelengths. However, because the deposition temperature was limited to 250°C, the electron mobility was limited to as low as 2-3 cm 2/V s due to the small grain size (∼25 nm). The results indicate that ZnO:Ga films deposited by HWPS can be used in the transparent conducting oxide layer, provided that higher electron mobility is achieved.
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U2 - 10.1002/pssa.200669616
DO - 10.1002/pssa.200669616
M3 - Article
AN - SCOPUS:33749003448
VL - 203
SP - 2882
EP - 2886
JO - Physica Status Solidi (A) Applications and Materials Science
JF - Physica Status Solidi (A) Applications and Materials Science
SN - 1862-6300
IS - 11
ER -