抜粋
Sputtering deposition of Ga-doped ZnO (ZnO: Ga) thin films was carried out using the helicon-waveexcited plasma sputtering (HWPS) method. The films sputtered above 150°C had a preferential {0001} orientation. According to the surface-damage-free nature, the films having featureless surface morphology exhibited an optical transmittance greater than 80% in the visible spectral wavelengths. However, because the deposition temperature was limited to 250°C, the electron mobility was limited to as low as 2-3 cm 2/V s due to the small grain size (∼25 nm). The results indicate that ZnO:Ga films deposited by HWPS can be used in the transparent conducting oxide layer, provided that higher electron mobility is achieved.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 2882-2886 |
| ページ数 | 5 |
| ジャーナル | Physica Status Solidi (A) Applications and Materials Science |
| 巻 | 203 |
| 発行部数 | 11 |
| DOI | |
| 出版物ステータス | Published - 2006 9 1 |
| 外部発表 | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering
- Materials Chemistry
フィンガープリント Helicon-wave-excited plasma sputtering deposition of Ga-doped ZnO transparent conducting films' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。
これを引用
Sugiyama, M., Murayama, A., Imao, T., Saiki, K., Nakanishi, H., & Chichibu, S. F. (2006). Helicon-wave-excited plasma sputtering deposition of Ga-doped ZnO transparent conducting films. Physica Status Solidi (A) Applications and Materials Science, 203(11), 2882-2886. https://doi.org/10.1002/pssa.200669616