Helicon-wave-excited plasma sputtering deposition of Ga-doped ZnO transparent conducting films

Mutsumi Sugiyama, Akira Murayama, Takashi Imao, Keita Saiki, Hisayuki Nakanishi, Shigefusa F. Chichibu

研究成果: Article査読

11 被引用数 (Scopus)

抄録

Sputtering deposition of Ga-doped ZnO (ZnO: Ga) thin films was carried out using the helicon-waveexcited plasma sputtering (HWPS) method. The films sputtered above 150°C had a preferential {0001} orientation. According to the surface-damage-free nature, the films having featureless surface morphology exhibited an optical transmittance greater than 80% in the visible spectral wavelengths. However, because the deposition temperature was limited to 250°C, the electron mobility was limited to as low as 2-3 cm 2/V s due to the small grain size (∼25 nm). The results indicate that ZnO:Ga films deposited by HWPS can be used in the transparent conducting oxide layer, provided that higher electron mobility is achieved.

本文言語English
ページ(範囲)2882-2886
ページ数5
ジャーナルPhysica Status Solidi (A) Applications and Materials Science
203
11
DOI
出版ステータスPublished - 2006 9月 1
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 表面および界面
  • 表面、皮膜および薄膜
  • 電子工学および電気工学
  • 材料化学

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