TY - JOUR
T1 - Helicon-wave-excited plasma sputtering deposition of CuAlO2 thin films
AU - Takahata, Satoru
AU - Imao, Takashi
AU - Nakanishi, Hisayuki
AU - Sugiyama, Mutsumi
AU - Chichibu, Shigefusa
PY - 2008/12/1
Y1 - 2008/12/1
N2 - Helicon-wave-excited plasma sputtering (HWPS) method was used to deposit CuAlO2 films on (0001) Al2O3 substrates at 700-800 ° C for the first time. For the films deposited at 700 ° C, the best full-width at half-maximum (FWHM) value of the (006) CuAlO2 X-ray diffraction peak was 0.19 degrees, which was smaller than those reported previously using other deposition methods. The HWPS method was shown to have technical importance in developing p-type TCO films, as it seldom damage the film surface.
AB - Helicon-wave-excited plasma sputtering (HWPS) method was used to deposit CuAlO2 films on (0001) Al2O3 substrates at 700-800 ° C for the first time. For the films deposited at 700 ° C, the best full-width at half-maximum (FWHM) value of the (006) CuAlO2 X-ray diffraction peak was 0.19 degrees, which was smaller than those reported previously using other deposition methods. The HWPS method was shown to have technical importance in developing p-type TCO films, as it seldom damage the film surface.
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U2 - 10.1002/pssc.200779181
DO - 10.1002/pssc.200779181
M3 - Conference article
AN - SCOPUS:77951260651
VL - 5
SP - 3101
EP - 3103
JO - Physica Status Solidi C: Conferences
JF - Physica Status Solidi C: Conferences
SN - 1862-6351
IS - 9
T2 - 34th International Symposium on Compound Semiconductors, ISCS-2007
Y2 - 15 October 2007 through 18 October 2007
ER -