Helicon-wave-excited plasma sputtering (HWPS) method was used to deposit CuAlO2 films on (0001) Al2O3 substrates at 700-800 ° C for the first time. For the films deposited at 700 ° C, the best full-width at half-maximum (FWHM) value of the (006) CuAlO2 X-ray diffraction peak was 0.19 degrees, which was smaller than those reported previously using other deposition methods. The HWPS method was shown to have technical importance in developing p-type TCO films, as it seldom damage the film surface.
|ジャーナル||Physica Status Solidi (C) Current Topics in Solid State Physics|
|出版ステータス||Published - 2008 12月 1|
|イベント||34th International Symposium on Compound Semiconductors, ISCS-2007 - Kyoto, Japan|
継続期間: 2007 10月 15 → 2007 10月 18
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