Heavy B atomic-layer doping characteristics in Si epitaxial growth on B adsorbed Si(1 0 0) by ultraclean low-pressure CVD system

Hiroki Tanno, Masao Sakuraba, Bernd Tillack, Junichi Murota

研究成果: Article査読

18 被引用数 (Scopus)

抄録

Heavy B atomic-layer doping is performed by B atomic-layer formation on Si(1 0 0) using B2H6 and subsequent Si capping layer deposition using SiH4. By B2H6 exposure on Si(1 0 0) at 180 °C, the B atom amount tends to saturate self-limitedly at around 1.4 × 1015 cm-2 (two atomic layers (AL)). In the case of exposure at 500 °C, the B atom amount increases with time and exceeds two AL. Additionally, B oxide formation by air exposure is observed for 500 °C but not for 180 °C. Therefore, it is suggested that the H adsorption on the B AL is kept at 180 °C and H desorption from the B AL proceeds at 500 °C. It is also found that the SiH4 exposure on the B AL at low temperatures such as 180-300 °C effectively improves the electrical activity of B and suppresses lattice strain generation even with the subsequent Si capping at 500 °C. These results demonstrate that the low temperature reaction of SiH4 as well as B2H6 open the way to extremely heavy B atomic-layer doping.

本文言語English
ページ(範囲)877-879
ページ数3
ジャーナルSolid-State Electronics
53
8
DOI
出版ステータスPublished - 2009 8

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学

フィンガープリント

「Heavy B atomic-layer doping characteristics in Si epitaxial growth on B adsorbed Si(1 0 0) by ultraclean low-pressure CVD system」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル