Heavy atomic-layer doping of nitrogen in Si1 - xGex film epitaxially grown on Si(100) by ultraclean low-pressure CVD

Tomoyuki Kawashima, Masao Sakuraba, Bernd Tillack, Junichi Murota

研究成果: Article査読

8 被引用数 (Scopus)

抄録

N atomic-layer doping in a nanometer-order Si/Si1 - xGex/Si(100) heterostructure using ultraclean low-pressure chemical vapor deposition and its thermal stability at 650 °C were investigated. In the Si0.5Ge0.5 epitaxial layer, it is found that a N doping dose of 6 × 1014 cm- 2 can be confined within an about 1.5 nm-thick region even after 650 °C heat treatment in contrast to the result for Si cap layer growth on the thermally nitrided Si(100) with a N doping dose of 6 × 1014 cm- 2 which was found to be amorphous. Moreover, it is suggested that the confined N atoms in Si1 - xGex preferentially form Si-N bonds and that formation of Si3N4 is enhanced by the heat treatment at 650 °C.

本文言語English
ページ(範囲)S62-S64
ジャーナルThin Solid Films
518
6 SUPPL. 1
DOI
出版ステータスPublished - 2010 1月 1

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 表面および界面
  • 表面、皮膜および薄膜
  • 金属および合金
  • 材料化学

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