Hardware implementation of new analog memory for neural networks

Koji Nakajima, Shigeo Sato, Tomoyasu Kitaura, Junichi Murota, Yasuji Sawada

研究成果: Article査読

10 被引用数 (Scopus)

抄録

We have fabricated a new analog memory with a floating gate as a key component to store synaptic weights for integrated artificial neural networks. The new analog memory comprises a tunnel junction (poly-Si/poly-Si oxide/poly-Si sandwich structure), a thin-film transistor, two capacitors, and a floating gate MOSFET. The diffusion of the charges injected through the tunnel junction is controlled by switching operation of the thin-film transistor, and we refer to the new analog memory as switched diffusion analog memory (SDAM). The obtained characteristics of SDAM are a fast switching speed and an improved linearity between the potential of the floating gate and the number of pulse inputs. SDAM can be used in a neural network in which write/erase and read operations are performed simultaneously.

本文言語English
ページ(範囲)101-105
ページ数5
ジャーナルIEICE Transactions on Electronics
E78-C
1
出版ステータスPublished - 1995 1 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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