Hard X-ray photoelectron spectroscopic study on high-k dielectrics based resistic random access memory

T. Nagata, Y. Yamashita, H. Yoshikawa, T. Chikyow

研究成果: Conference contribution

抄録

The Cu ion migration behavior of a Pt/Cu/HfO2/Pt structure, which is a high-k dielectrics based resistive random access memory (ReRAM) and exhibits resistance switching behavior, against the sweep number of pulsed bias voltage was investigated by hard Xray photoelectron spectroscopy (HX-PES). A forward bias application induced the reduction of the unintentionally oxidized Cu top electrode to the Cu ion migration in the HfO2 layer. resulting in the switching from the high resistivity to the low resistivity at approximately ±1.2 V. HX-PES also indicated chat the intensity ratio of Cu 2p3/2 to Hf 3d5/2 core level spectra decreased with increasing the sweep number of pulsed bias voltage. suggesting that Cu moves to the bottom Pt electrode side continuously, which consists with the degradation of switching properties. The Cu ion has a key role in the switching of the Pt/Cu/HfO2/Pt structure.

本文言語English
ホスト出版物のタイトルNonvolatile Memories 5
編集者S. Shingubara, Z. Karim, B. Magyari-Kope, H. Shima, H. Kubota, J. G. Park, K. Kobayashi, L. Goux, G. Bersuker, Y. Saito
出版社Electrochemical Society Inc.
ページ39-47
ページ数9
32
ISBN(電子版)9781607687818
DOI
出版ステータスPublished - 2016
外部発表はい
イベントSymposium on Nonvolatile Memories 5 - PRiME 2016/230th ECS Meeting - Honolulu, United States
継続期間: 2016 10月 22016 10月 7

出版物シリーズ

名前ECS Transactions
番号32
75
ISSN(印刷版)1938-6737
ISSN(電子版)1938-5862

Conference

ConferenceSymposium on Nonvolatile Memories 5 - PRiME 2016/230th ECS Meeting
国/地域United States
CityHonolulu
Period16/10/216/10/7

ASJC Scopus subject areas

  • 工学(全般)

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