Hard mask fabrication for magnetic random access memory elements using focused ion beam assisted selective chemical vapor deposition

H. Kubota, M. Hamada, Y. Ando, T. Miyazaki

研究成果: Article査読

5 被引用数 (Scopus)

抄録

A study to investigate the fabrication of carbon masks for very small magnetic tunnel junctions (MTJ) using focused ion beam assisted selective chemical vapor deposition was presented. The gaseous phenanthrene that was absorbed on the sample surface, decomposed into solid carbon by irradiation with a Ga ion beam. The carbon layer deposited demonstrated a lower(higher) etching rate for Ar(O2) ion etching. The results showed that the width of the carbon mask patterns varied from about 30 to 500 nm.

本文言語English
ページ(範囲)8370-8372
ページ数3
ジャーナルJournal of Applied Physics
93
10 3
DOI
出版ステータスPublished - 2003 5 15

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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