Hall effect in macroscopic ballistic four-terminal square structures

Y. Hirayama, S. Tarucha, T. Saku, Y. Horikoshi

研究成果: Article査読

7 被引用数 (Scopus)

抄録

The Hall effect is studied for 1030-m size ballistic four-terminal square structures fabricated on an AlxGa1-xAs-GaAs high-mobility modulation-doped wafer. On this scale, four-terminal square structures with sharp aperture corners are possible. The Hall resistance is not quenched and is larger than the classical linear value in a low magnetic field. It has periodic peaks corresponding to electron focusing when the terminals are narrow, and a broadening of these peaks makes a plateaulike structure when the terminals are wide.

本文言語English
ページ(範囲)3440-3443
ページ数4
ジャーナルPhysical Review B
44
7
DOI
出版ステータスPublished - 1991
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学

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