We studied carrier transport in SixGe1-x polycrystalline bulk alloys grown by the Czochralski method. The grains in the alloys are elongated in the growth direction due to the supercooling effect. At a high concentration of grains, the anisotropy of their shape leads to an observable anisotropy in the electrical properties of the alloys. The "two-phase geometrical model" was applied to estimate the transport properties of the grains and grain boundary materials from the Hall effect measurements in different directions of the alloys. The results show that in the SiGe polycrystalline alloy, conductive grains are surrounded by high-resistivity barriers. The height of the barriers was calculated to be 0.38 eV and "electrical" thickness 3 × 10-5 cm.
|ジャーナル||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|号||2 PART A|
|出版ステータス||Published - 1996 2月|
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