Hall effect in anisotropic SixGe1-x polycrystals

Teimouraz R. Mchedlidze, Ichiro Yonenaga

研究成果: Article査読

4 被引用数 (Scopus)

抄録

We studied carrier transport in SixGe1-x polycrystalline bulk alloys grown by the Czochralski method. The grains in the alloys are elongated in the growth direction due to the supercooling effect. At a high concentration of grains, the anisotropy of their shape leads to an observable anisotropy in the electrical properties of the alloys. The "two-phase geometrical model" was applied to estimate the transport properties of the grains and grain boundary materials from the Hall effect measurements in different directions of the alloys. The results show that in the SiGe polycrystalline alloy, conductive grains are surrounded by high-resistivity barriers. The height of the barriers was calculated to be 0.38 eV and "electrical" thickness 3 × 10-5 cm.

本文言語English
ページ(範囲)652-655
ページ数4
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
35
2 PART A
DOI
出版ステータスPublished - 1996 2月
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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