Guidelines for symmetric threshold voltage in tunnel FinFETs with single and dual metal gate electrodes

W. Mizubayashi, K. Fukuda, T. Mori, K. Endo, Y. X. Liu, T. Matsukawa, S. O'uchi, Y. Ishikawa, S. Migita, Y. Morita, A. Tanabe, J. Tsukada, H. Yamauchi, M. Masahara, H. Ota

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

We report guidelines for symmetric threshold voltage (Vth) in double gate (DG) tunnel FinFETs (tFinFETs) with single and dual metal gate electrodes. To realize the symmetric Vth=±0.2V, the work function difference (ΔΦm) of each gate electrode in n- and p-type tFinFETs with a nondoped Si channel must be 1.34 eV, indicating that tuning the effective work functions in the dual metal gates is difficult. By adding Ge in the channel, the work function required in Ge-channel p-tFinFETs can be reduced to 4.46 eV, furthermore, ΔΦm required to realize a symmetric Vth in n- and p-type tFinFETs can be as small as the minimum value of 0.28 e V. This result means that a symmetric Vth is realized in realistic dual metal gate materials by adding Ge. By using our independent DG tFinFETs with a novel source profile, a symmetric Vth can be realized in a single metal gate in a Ge channel.

本文言語English
ホスト出版物のタイトルESSDERC 2013 - Proceedings of the 43rd European Solid-State Device Research Conference
出版社IEEE Computer Society
ページ202-205
ページ数4
ISBN(印刷版)9781479906499
DOI
出版ステータスPublished - 2013
外部発表はい
イベント43rd European Solid-State Device Research Conference, ESSDERC 2013 - Bucharest, Romania
継続期間: 2013 9 162013 9 20

出版物シリーズ

名前European Solid-State Device Research Conference
ISSN(印刷版)1930-8876

Conference

Conference43rd European Solid-State Device Research Conference, ESSDERC 2013
国/地域Romania
CityBucharest
Period13/9/1613/9/20

ASJC Scopus subject areas

  • 電子工学および電気工学
  • 安全性、リスク、信頼性、品質管理

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