Growth rate of TiN films by chemical-vapour-deposition

Noboru Yoshikawa, Kazuyuki Higashino, Atsushi Kikuchi

研究成果: Article査読

2 被引用数 (Scopus)

抄録

Reactant gas mixture composed of TiCl4, H2, and N2 was introduced to the tubular reactor and TiN was deposited on the inner wall of the reactor. Relationships between gas flow rates and growth rates of the films were examined at 1273 K and at various gas compositions in order to determine the gas flow rates required for the reaction controlled conditions. Under these conditions, empirical rate equations were obtained. After an examination of the reaction mechanism, the reaction rate is expressed in an equation.

本文言語English
ページ(範囲)442-447
ページ数6
ジャーナルNippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals
58
4
DOI
出版ステータスPublished - 1994

ASJC Scopus subject areas

  • 凝縮系物理学
  • 材料力学
  • 金属および合金
  • 材料化学

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