Reactant gas mixture composed of TiCl4, H2, and N2 was introduced to the tubular reactor and TiN was deposited on the inner wall of the reactor. Relationships between gas flow rates and growth rates of the films were examined at 1273 K and at various gas compositions in order to determine the gas flow rates required for the reaction controlled conditions. Under these conditions, empirical rate equations were obtained. After an examination of the reaction mechanism, the reaction rate is expressed in an equation.
|ジャーナル||Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals|
|出版ステータス||Published - 1994|
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