Growth rate of silicon nanowires

J. Kikkawa; Y. Ohno; S. Takeda

doi:10.1063/1.1888034

Growth rate of silicon nanowires

J. Kikkawa, Y. Ohno, S. Takeda

研究成果: Article › 査読

127 被引用数 (Scopus)

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We have measured the growth rate of silicon nanowires (SiNWs), which were grown at temperatures between 365 and 495 °C via the vapor-liquid-solid (VLS) mechanism. We grew SiNWs using gold as catalysts and monosilane (SiH4) as a vapor phase reactant. Observing SiNWs by means of transmission electron microscopy, we have found that SiNWs with smaller diameters grow slower than those with larger ones, and the critical diameter at which growth stops completely exists. We have estimated the critical diameter of SiNWs to be about 2 nm. We have also measured the temperature dependence of the growth rate of SiNWs and estimated the activation energy of the growth of SiNWs to be 230 kJmol.

本文言語	English
論文番号	123109
ページ（範囲）	1-3
ページ数	3
ジャーナル	Applied Physics Letters
巻	86
号	12
DOI	https://doi.org/10.1063/1.1888034
出版ステータス	Published - 2005 3月 21
外部発表	はい

ASJC Scopus subject areas

物理学および天文学（その他）

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10.1063/1.1888034

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@article{867f5fd99725417588ccfa2ffed8cc23,

title = "Growth rate of silicon nanowires",

abstract = "We have measured the growth rate of silicon nanowires (SiNWs), which were grown at temperatures between 365 and 495 °C via the vapor-liquid-solid (VLS) mechanism. We grew SiNWs using gold as catalysts and monosilane (SiH4) as a vapor phase reactant. Observing SiNWs by means of transmission electron microscopy, we have found that SiNWs with smaller diameters grow slower than those with larger ones, and the critical diameter at which growth stops completely exists. We have estimated the critical diameter of SiNWs to be about 2 nm. We have also measured the temperature dependence of the growth rate of SiNWs and estimated the activation energy of the growth of SiNWs to be 230 kJmol.",

author = "J. Kikkawa and Y. Ohno and S. Takeda",

note = "Funding Information: The authors would like to thank Dr. Chitose Sada of Graduate School of Engineering Science, Osaka University for useful advice about the design of CVD system. This work was partly supported by CREST-JST. ",

year = "2005",

month = mar,

day = "21",

doi = "10.1063/1.1888034",

language = "English",

volume = "86",

pages = "1--3",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "12",

}

TY - JOUR

T1 - Growth rate of silicon nanowires

AU - Kikkawa, J.

AU - Ohno, Y.

AU - Takeda, S.

N1 - Funding Information: The authors would like to thank Dr. Chitose Sada of Graduate School of Engineering Science, Osaka University for useful advice about the design of CVD system. This work was partly supported by CREST-JST.

PY - 2005/3/21

Y1 - 2005/3/21

N2 - We have measured the growth rate of silicon nanowires (SiNWs), which were grown at temperatures between 365 and 495 °C via the vapor-liquid-solid (VLS) mechanism. We grew SiNWs using gold as catalysts and monosilane (SiH4) as a vapor phase reactant. Observing SiNWs by means of transmission electron microscopy, we have found that SiNWs with smaller diameters grow slower than those with larger ones, and the critical diameter at which growth stops completely exists. We have estimated the critical diameter of SiNWs to be about 2 nm. We have also measured the temperature dependence of the growth rate of SiNWs and estimated the activation energy of the growth of SiNWs to be 230 kJmol.

AB - We have measured the growth rate of silicon nanowires (SiNWs), which were grown at temperatures between 365 and 495 °C via the vapor-liquid-solid (VLS) mechanism. We grew SiNWs using gold as catalysts and monosilane (SiH4) as a vapor phase reactant. Observing SiNWs by means of transmission electron microscopy, we have found that SiNWs with smaller diameters grow slower than those with larger ones, and the critical diameter at which growth stops completely exists. We have estimated the critical diameter of SiNWs to be about 2 nm. We have also measured the temperature dependence of the growth rate of SiNWs and estimated the activation energy of the growth of SiNWs to be 230 kJmol.

UR - http://www.scopus.com/inward/record.url?scp=17944376542&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=17944376542&partnerID=8YFLogxK

U2 - 10.1063/1.1888034

DO - 10.1063/1.1888034

M3 - Article

AN - SCOPUS:17944376542

SN - 0003-6951

VL - 86

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

M1 - 123109

ER -

Growth rate of silicon nanowires

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