Growth of ZnSe on misoriented GaAs(1 1 0) surface by molecular beam epitaxy

K. W. Koh, M. W. Cho, Z. Zhu, T. Hanada, M. Isshiki, T. Yao

研究成果: Article査読

3 被引用数 (Scopus)

抄録

Heteroepitaxial layers of ZnSe were grown on GaAs(1 1 0)-just and misoriented GaAs(1 1 0) surfaces by molecular beam epitaxy (MBE). Facet free ZnSe heteroepitaxial films are achieved by growth on GaAs(1 1 0)6°-off substrates, while ZnSe on GaAs(1 1 0)-just shows the formation of facets aligned along the [0 0 1] direction. A very low etch-pit density (EPD), ∼104/cm2, is achieved for ZnSe on GaAs(1 1 0) 6°-off surface without the use of GaAs buffer layer. Channeling backscattering spectra and X-ray rocking curve results show that good heterointerface and epitaxial layers, grown in the same orientation as the GaAs(1 1 0) substrate, are obtained.

本文言語English
ページ(範囲)46-50
ページ数5
ジャーナルJournal of Crystal Growth
184-185
DOI
出版ステータスPublished - 1998 1月 1

ASJC Scopus subject areas

  • 凝縮系物理学
  • 無機化学
  • 材料化学

フィンガープリント

「Growth of ZnSe on misoriented GaAs(1 1 0) surface by molecular beam epitaxy」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル