TY - JOUR
T1 - Growth of ZnSe on misoriented GaAs(1 1 0) surface by molecular beam epitaxy
AU - Koh, K. W.
AU - Cho, M. W.
AU - Zhu, Z.
AU - Hanada, T.
AU - Isshiki, M.
AU - Yao, T.
PY - 1998/1/1
Y1 - 1998/1/1
N2 - Heteroepitaxial layers of ZnSe were grown on GaAs(1 1 0)-just and misoriented GaAs(1 1 0) surfaces by molecular beam epitaxy (MBE). Facet free ZnSe heteroepitaxial films are achieved by growth on GaAs(1 1 0)6°-off substrates, while ZnSe on GaAs(1 1 0)-just shows the formation of facets aligned along the [0 0 1] direction. A very low etch-pit density (EPD), ∼104/cm2, is achieved for ZnSe on GaAs(1 1 0) 6°-off surface without the use of GaAs buffer layer. Channeling backscattering spectra and X-ray rocking curve results show that good heterointerface and epitaxial layers, grown in the same orientation as the GaAs(1 1 0) substrate, are obtained.
AB - Heteroepitaxial layers of ZnSe were grown on GaAs(1 1 0)-just and misoriented GaAs(1 1 0) surfaces by molecular beam epitaxy (MBE). Facet free ZnSe heteroepitaxial films are achieved by growth on GaAs(1 1 0)6°-off substrates, while ZnSe on GaAs(1 1 0)-just shows the formation of facets aligned along the [0 0 1] direction. A very low etch-pit density (EPD), ∼104/cm2, is achieved for ZnSe on GaAs(1 1 0) 6°-off surface without the use of GaAs buffer layer. Channeling backscattering spectra and X-ray rocking curve results show that good heterointerface and epitaxial layers, grown in the same orientation as the GaAs(1 1 0) substrate, are obtained.
KW - Channeling backscattering spectra
KW - Etch-pit density (EPD)
KW - Facet
KW - MBE
KW - X-ray rocking curve
KW - ZnSe
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U2 - 10.1016/S0022-0248(98)80291-1
DO - 10.1016/S0022-0248(98)80291-1
M3 - Article
AN - SCOPUS:11544368702
VL - 184-185
SP - 46
EP - 50
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
ER -