Heteroepitaxial layers of ZnSe were grown on GaAs(1 1 0)-just and misoriented GaAs(1 1 0) surfaces by molecular beam epitaxy (MBE). Facet free ZnSe heteroepitaxial films are achieved by growth on GaAs(1 1 0)6°-off substrates, while ZnSe on GaAs(1 1 0)-just shows the formation of facets aligned along the [0 0 1] direction. A very low etch-pit density (EPD), ∼104/cm2, is achieved for ZnSe on GaAs(1 1 0) 6°-off surface without the use of GaAs buffer layer. Channeling backscattering spectra and X-ray rocking curve results show that good heterointerface and epitaxial layers, grown in the same orientation as the GaAs(1 1 0) substrate, are obtained.
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