Growth of ZnSe on GaAs(1 1 0) surfaces by molecular beam epitaxy

K. W. Koh, M. W. Cho, Z. Zhu, T. Hanada, K. H. Yoo, M. Isshiki, T. Yao

研究成果: Article査読

2 被引用数 (Scopus)

抄録

Single crystal films of ZnSe have been grown on nonpolar GaAs(1 1 0) surfaces by molecular beam epitaxy (MBE). The epitaxial films have been characterized by in situ reflection high-energy electron diffraction (RHEED), ex situ scanning electron microscopy (SEM) and X-ray diffraction. RHEED and SEM images of the surfaces reveal the formation of facets which are aligned along the [0 0 1] direction. The formation of facets indicates that ZnSe growth on the (1 1 0) surface proceeds 6°-13° off the vicinal (1 1 0) surface. Facet-free ZnSe surface has been successfully grown on a GaAs(1 1 0) 6°-off the substrate.

本文言語English
ページ(範囲)528-534
ページ数7
ジャーナルJournal of Crystal Growth
186
4
DOI
出版ステータスPublished - 1998 3月 7

ASJC Scopus subject areas

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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