Growth of very-high-mobility AlGaSb/InAs high-electron-mobility transistor structure on si substrate for high speed electronic applications

Y. C. Lin, H. Yamaguchi, E. Y. Chang, Y. C. Hsieh, M. Ueki, Y. Hirayama, C. Y. Chang

研究成果: Article査読

23 被引用数 (Scopus)

抄録

The growth of the AlGaSbInAs high-electron-mobility transistor (HEMT) epitaxial structure on the Si substrate is investigated. Buffer layers consisted of UHV/chemical vapor deposited grown GeGeSi and molecular beam epitaxy-grown AlGaSbAlSbGaAs were used to accommodate the strain induced by the large lattice mismatch between the AlGaSbInAs HEMT structure and the Si substrate. The crystalline quality of the structure grown was examined by x-ray diffraction, transmission electron microscopy, and atomic force microscopy. Finally, very high room-temperature electron mobility of 27 300 cm2 V s was achieved. It is demonstrated that a very-high-mobility AlGaSbInAs HEMT structure on the Si substrate can be achieved with the properly designed buffer layers.

本文言語English
論文番号023509
ジャーナルApplied Physics Letters
90
2
DOI
出版ステータスPublished - 2007

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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