Growth of vertical silicon nanowires array using electrochemical alternative

Van Hoang Nguyen, Haruna Watanabe, Yusuke Hoshi, Takanori Kiguchi, Toyohiko Konno, Seiji Samukawa, Noritaka Usami

研究成果: Conference contribution

2 被引用数 (Scopus)

抄録

Silicon nanowires have been grown on Si (111) substrate using the vapor-liquid-solid (VLS) via anodic aluminum oxide (AAO) fabrication and gold plating deposition. The pore diameters of AAO are expected to be closely related with the size of gold catalyst as well as the diameter of the subsequently grown silicon nanowires. The nanochannel diameter of AAO template was controlled by modifying the applied potential in different values. Filling the small amount of Au at the bottom of AAO template was realized by electrochemically plating technique. The sub-20nm diameter gold nanowires were formed thanks to long plating duration. The growth of vertical silicon nanowires by VLS techniques was carried out in different growth time using disilane as a source gas.

本文言語English
ホスト出版物のタイトル39th IEEE Photovoltaic Specialists Conference, PVSC 2013
出版社Institute of Electrical and Electronics Engineers Inc.
ページ2443-2446
ページ数4
ISBN(印刷版)9781479932993
DOI
出版ステータスPublished - 2013
イベント39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL, United States
継続期間: 2013 6 162013 6 21

出版物シリーズ

名前Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN(印刷版)0160-8371

Other

Other39th IEEE Photovoltaic Specialists Conference, PVSC 2013
国/地域United States
CityTampa, FL
Period13/6/1613/6/21

ASJC Scopus subject areas

  • 制御およびシステム工学
  • 産業および生産工学
  • 電子工学および電気工学

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