Growth of structure-controlled polycrystalline silicon ingots for solar cells by casting

Kozo Fujiwara, Wugen Pan, Noritaka Usami, Kohei Sawada, Masatoshi Tokairin, Yoshitaro Nose, Akiko Nomura, Toetsu Shishido, Kazuo Nakajima

研究成果: Article査読

146 被引用数 (Scopus)

抄録

We propose a new concept of growing a polycrystalline Si ingot suitable for solar cells by casting based on the directional growth behavior of polycrystalline Si investigated using an in situ observation system. The cooling conditions for the Si melt were crucial for controlling growth in the initial stage. At a high cooling rate, dendrite growth occurred along the crucible wall. This growth mechanism was found to be useful for obtaining a polycrystalline structure with large oriented grains. In fact, using the dendrites grown in the initial stage of casting, a polycrystalline Si ingot with large oriented grains was obtained. The solar cell properties of such structure-controlled polycrystalline Si were as good as those of single-crystalline Si.

本文言語English
ページ(範囲)3191-3197
ページ数7
ジャーナルActa Materialia
54
12
DOI
出版ステータスPublished - 2006 7月

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • セラミックおよび複合材料
  • ポリマーおよびプラスチック
  • 金属および合金

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