Growth of semi-polar InN layer on GaAs (1 1 0) surface by MOVPE

Hisashi Murakami, Hyun Chol Cho, Mayu Suematsu, Rie Togashi, Yoshinao Kumagai, Ryuichi Toba, Akinori Koukitu

研究成果: Article査読

6 被引用数 (Scopus)

抄録

Investigation of the hetero-epitaxial growth of InN on a GaAs (1 1 0) substrate was performed by metalorganic vapor phase epitaxy in order to realize the formation of semi-polar InN layer on it. The orientation relationship between InN and GaAs (1 1 0) was confirmed by 2θ-ω and pole figure of X-ray diffraction measurements. It was found that the crystalline orientation strongly depended on the growth temperature; mixed domains of (1 0 1 3) and (1 1 2 0) InN have been grown on GaAs (1 1 0) surfaces when the growth temperature was below 550 °C, while (1 0 1 3) semi-polar InN layers could be grown by increasing the growth temperature above 575 °C. It was also found that the in-plane anisotropy of semi-polar InN layer was suppressed by increasing the growth temperature. Epitaxial relationship of the InN with the GaAs (1 1 0) substrate was InN (1 0 1 3) plane parallel to GaAs (1 1 0) and InN (2 1 1 0) plane parallel to GaAs(1 1 0).

本文言語English
ページ(範囲)479-482
ページ数4
ジャーナルJournal of Crystal Growth
318
1
DOI
出版ステータスPublished - 2011 3 1

ASJC Scopus subject areas

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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