Growth of semi-polar GaN-based light-emitting diodes grown on an patterned Si substrate

Ching Hsueh Chiu, Da Wei Lin, Zhen Yu Li, Shih Chun Ling, Hao Chung Kuo, Tien Chang Lu, Shing Chung Wang, Wei Tasi Liao, Tomoyuki Tanikawa, Yoshio Honda, Masahito Yamaguchi, Nobuhiko Sawaki

研究成果: Conference contribution

2 被引用数 (Scopus)

抄録

We present a study of semi-polar (1-1̄01) InGaN-based light emitting diodes (LEDs) grown on patterned (001) Si substrates by atmospheric-pressure metal organic chemical vapor deposition. A transmission electron microscopy image of the semi-polar template shows that the threading dislocation density was decreased significantly. From electroluminescence measurement, semi-polar LEDs exhibit little blue-shift and low efficiency droop at a high injection current because the reduction of the polarization field not only made the band diagram smoother but also restricted electron overflow to the p-GaN layer as shown in simulations. These results indicate that semi-polar InGaN-based LEDs can possess a high radiative recombination rate and low efficiency droop at a high injection current.

本文言語English
ホスト出版物のタイトルGallium Nitride Materials and Devices VI
DOI
出版ステータスPublished - 2011
イベントGallium Nitride Materials and Devices VI - San Francisco, CA, United States
継続期間: 2011 1 242011 1 27

出版物シリーズ

名前Proceedings of SPIE - The International Society for Optical Engineering
7939
ISSN(印刷版)0277-786X

Other

OtherGallium Nitride Materials and Devices VI
国/地域United States
CitySan Francisco, CA
Period11/1/2411/1/27

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • コンピュータ サイエンスの応用
  • 応用数学
  • 電子工学および電気工学

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