Growth of polarity-controlled ZnO films on (0001) Al 2O 3

J. S. Park, J. H. Chang, T. Minegishi, H. J. Lee, S. H. Park, I. H. Im, T. Hanada, S. K. Hong, M. W. Cho, T. Yao

研究成果: Article査読

12 被引用数 (Scopus)

抄録

The polarity control of ZnO films grown on (0001) Al 2O 3 substrates by plasma-assisted molecular-beam epitaxy (P-MBE) was achieved by using a novel CrN buffer layer. Zn-polar ZnO films were obtained by using a Zn-terminated CrN buffer layer, while O-polar ZnO films were achieved by using a Cr 2O 3 layer formed by O-plasma exposure of a CrN layer. The mechanism of polarity control was proposed. Optical and structural quality of ZnO films was characterized by high-resolution X-ray diffraction and photoluminescence (PL) spectroscopy. Low-temperature PL spectra of Zn-polar and O-polar samples show dominant bound exciton (I 8) and strong free exciton emissions. Finally, one-dimensional periodic structures consisting of Zn-polar and O-polar ZnO films were simultaneously grown on the same substrate. The periodic inversion of polarity was confirmed in terms of growth rate, surface morphology, and piezo response microscopy (PRM) measurement.

本文言語English
ページ(範囲)736-742
ページ数7
ジャーナルJournal of Electronic Materials
37
5
DOI
出版ステータスPublished - 2008 5月

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学

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