TY - JOUR
T1 - Growth of Lu2O3 and HfO2 based high melting temperature single crystals by indirect heating method using arc plasma
AU - Kim, Kyoung Jin
AU - Kamada, Kei
AU - Murakami, Rikito
AU - Horiai, Takahiko
AU - Ishikawa, Shiori
AU - Kochurikhin, Vladimir V.
AU - Yoshino, Masao
AU - Yamaji, Akihiro
AU - Shoji, Yasuhiro
AU - Kurosawa, Shunsuke
AU - Toyoda, Satoshi
AU - Sato, Hiroki
AU - Yokota, Yuui
AU - Ohashi, Yuji
AU - Yoshikawa, Akira
N1 - Funding Information:
Funding: This work was partially supported by (i) Japan Society for the Promotion of Science (JSPS) Grants-in-Aid for Scientific Research (KAKENHI) Project ID 19164606, 19164252, 19132801, 17920611, and 18057417; (ii) Projects to support the advancement of strategic core technologies, Czech Science Foundation No. 15-18300Y and MEYS No. SOLID21 CZ.02.1.01/0.0/0.0/16_019/0000760 projects; and (iii) Crystal Clear Collaboration in CERN.
Funding Information:
This work was partially supported by (i) Japan Society for the Promotion of Science (JSPS) Grants-in-Aid for Scientific Research (KAKENHI) Project ID 19164606, 19164252, 19132801, 17920611, and 18057417; (ii) Projects to support the advancement of strategic core technologies, Czech Science Foundation No. 15-18300Y and MEYS No. SOLID21 CZ.02.1.01/0.0/0.0/16_019/0000760 projects; and (iii) Crystal Clear Collaboration in CERN.
Publisher Copyright:
© 2020 by the authors. Licensee MDPI, Basel, Switzerland.
PY - 2020/7
Y1 - 2020/7
N2 - A novel single-crystal growth method was developed, using arc plasma and metal melt, for a quick survey of high melting point materials. Single crystals of Yb-doped Lu2O3, Lu0.388Hf0.612O1.806, and Lu0.18Hf0.82O1.91, with melting points of 2460, 2900, and 2840◦C, respectively, were grown by an indirect heating method using arc plasma. We refer to this indirect heating growth method as the core heating (CH) method. The CH-grown Yb1%-doped Lu2O3 sample showed a full width at half maximum of 286 arcsec in the X-ray rocking curve. This value is better than the 393 arcsec obtained for the crystal grown by the micro-pulling-down (µ-PD) method. The Yb charge transfer state (CTS) emission was observed at 350 nm in the Yb1%-doped Lu2O3 and Lu0.18Hf0.82O1.91. In the case of the µ-PD method, using a rhenium (Re) crucible, absorption due to Re contamination and a resulting reduction in the Yb CTS emission were confirmed. However, contamination did not influence the properties observed in the crystals grown by the CH method.
AB - A novel single-crystal growth method was developed, using arc plasma and metal melt, for a quick survey of high melting point materials. Single crystals of Yb-doped Lu2O3, Lu0.388Hf0.612O1.806, and Lu0.18Hf0.82O1.91, with melting points of 2460, 2900, and 2840◦C, respectively, were grown by an indirect heating method using arc plasma. We refer to this indirect heating growth method as the core heating (CH) method. The CH-grown Yb1%-doped Lu2O3 sample showed a full width at half maximum of 286 arcsec in the X-ray rocking curve. This value is better than the 393 arcsec obtained for the crystal grown by the micro-pulling-down (µ-PD) method. The Yb charge transfer state (CTS) emission was observed at 350 nm in the Yb1%-doped Lu2O3 and Lu0.18Hf0.82O1.91. In the case of the µ-PD method, using a rhenium (Re) crucible, absorption due to Re contamination and a resulting reduction in the Yb CTS emission were confirmed. However, contamination did not influence the properties observed in the crystals grown by the CH method.
KW - Core heating method
KW - High melting point materials
KW - Oxides
KW - Scintillators
KW - Single-crystal growth
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UR - http://www.scopus.com/inward/citedby.url?scp=85090723798&partnerID=8YFLogxK
U2 - 10.3390/cryst10070619
DO - 10.3390/cryst10070619
M3 - Article
AN - SCOPUS:85090723798
VL - 10
SP - 1
EP - 8
JO - Crystals
JF - Crystals
SN - 2073-4352
IS - 7
M1 - 619
ER -