Growth temperature dependence of In-rich InGaN growth properties for each Ga/(Ga+In) supply ratio by radio-frequency plasma assisted molecular beam epitaxy was investigated. The luminescence property of In-rich InGaN films up to 20% of Ga improved compared with that of InN because their growth temperatures could be set at high and high purity InGaN films were obtained. This effect can be partly interpreted as a result of the larger bond strength of Ga-N than that of In-N. However, the InGaN films tend to be Ga-rich in case of relatively high growth temperatures. Also, InGaN dot-like structures at intermediate composition were grown as a result of the combination effect of phase separation due to the immiscibility of GaN into InN and local strain due to lattice mismatch between InGaN and underlying GaN buffer layer.
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