Growth of heavily indium doped Si crystals by co-doping of neutral impurity carbon or germanium

Kaihei Inoue, Yuki Tokumoto, Kentaro Kutsukake, Yutaka Ohno, Ichiro Yonenaga

研究成果: Conference contribution

2 被引用数 (Scopus)

抄録

Czochralski growth of Si crystals heavily doped with In impurity and co-doped with electrically neutral impurity C or Ge was conducted in order to investigate the solubility and ionization ratio of In in Si for utilizing in advanced ULSI and PV devices. The carrier concentrations in the grown In-doped and (In+C) and (In+Ge) co-doped crystals were in a range of 3.5∼6.5 ×1016 cm-3, much lower than the total concentration of In impurity due to the low ionization ratio. Sufficient increase of carrier concentrations by co-doping of C or Ge impurity was not detected for their low concentrations in the grown crystals investigated.

本文言語English
ホスト出版物のタイトルMaterials Integration
出版社Trans Tech Publications Ltd
ページ220-223
ページ数4
ISBN(印刷版)9783037853764
DOI
出版ステータスPublished - 2012
イベントInt. Symposium of GCOE: Materials Integration, in Conjunction with the 2nd Int. Symposium on Advanced Synthesis and Processing Technology for Materials, ASPT 2011 and the 8th Materials Science School for Young Scientists, KINKEN-WAKATE 2011 - Sendai, Japan
継続期間: 2011 12 12011 12 2

出版物シリーズ

名前Key Engineering Materials
508
ISSN(印刷版)1013-9826
ISSN(電子版)1662-9795

Other

OtherInt. Symposium of GCOE: Materials Integration, in Conjunction with the 2nd Int. Symposium on Advanced Synthesis and Processing Technology for Materials, ASPT 2011 and the 8th Materials Science School for Young Scientists, KINKEN-WAKATE 2011
CountryJapan
CitySendai
Period11/12/111/12/2

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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