Growth of GaN on SiC/Si substrates using AlN buffer layer by hot-mesh CVD

Kazuyuki Tamura, Yuichiro Kuroki, Kanji Yasui, Maki Suemitsu, Takashi Ito, Tetsuro Endou, Hideki Nakazawa, Yuzuru Narita, Masasuke Takata, Tadashi Akahane

研究成果: Article

16 引用 (Scopus)

抜粋

GaN films were grown on SiC/Si (111) substrates by hot-mesh chemical vapor deposition (CVD) using ammonia (NH3) and trimetylgallium (TMG) under low V/III source gas ratio (NH3/TMG = 80). The SiC layer was grown by a carbonization process on the Si substrates using propane (C3H8). The AlN layer was deposited as a buffer layer using NH3 and trimetylaluminum (TMA). GaN films were formed and grown by the reaction between NHx radicals, generated on a tungsten hot mesh, and the TMG molecules. The GaN films with the AlN buffer layer showed better crystallinity and stronger near-band-edge emission compared to those without the AlN layer.

元の言語English
ページ(範囲)659-662
ページ数4
ジャーナルThin Solid Films
516
発行部数5
DOI
出版物ステータスPublished - 2008 1 15

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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  • これを引用

    Tamura, K., Kuroki, Y., Yasui, K., Suemitsu, M., Ito, T., Endou, T., Nakazawa, H., Narita, Y., Takata, M., & Akahane, T. (2008). Growth of GaN on SiC/Si substrates using AlN buffer layer by hot-mesh CVD. Thin Solid Films, 516(5), 659-662. https://doi.org/10.1016/j.tsf.2007.06.200