Growth of GaN LED structure on Si substrate by MBE and monolithic fabrication of GaN LED cooling system

Masashi Wakui, Fang Ren Hu, Hidehisa Sameshima, Kazuhiro Hane

研究成果: Article査読

1 被引用数 (Scopus)

抄録

GaN-based light emitting diodes (LEDs) were fabricated by molecular beam epitaxy (MBE) on a GaN/Si substrate prepared by metal organic chemical vapor deposition (MOCVD). Blue light emission was obtained at the peak wavelength of 410 nm. An integration of GaN LEDs and a cooling system is proposed. GaN membrane structure with Si microchannels was fabricated from the GaN/Si substrate. A preliminary experiment for the proposed device was carried out.

本文言語English
ページ(範囲)171-174
ページ数4
ジャーナルIEEJ Transactions on Electrical and Electronic Engineering
5
2
DOI
出版ステータスPublished - 2010 1 1

ASJC Scopus subject areas

  • 電子工学および電気工学

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