Growth of GaN films by hot-mesh chemical vapor deposition using ruthenium-coated tungsten mesh

Yusuke Fukada, Kanji Yasui, Yuichiro Kuroki, Maki Suemitsu, Takashi Ito, Tetsuro Endou, Hideki Nakazawa, Yuzuru Narita, Masasuke Takata, Tadashi Akahane

研究成果: Article査読

3 被引用数 (Scopus)

抄録

GaN films were grown on AlN/SiC/Si substrates by hot-mesh chemical vapor deposition (CVD) using ruthenium (Ru)-coated tungsten (W)-mesh. When using the Ru-coated mesh, the crystallinity of the GaN films did not degrade until a mesh temperature of 1000°C, while the crystallinity markedly degraded at lower than 1100°C when using the W-mesh. From the photoluminescence (PL) spectra of GaN films grown using the Ru-coated W-mesh, strong near-band-edge emission without yellow luminescence can be observed. In order to elucidate the difference in the decomposition efficiency of ammonia gas, the hydrogen radical density generated by the heated W-mesh and Ru-coated mesh was also evaluated using tungsten phosphate glass plates.

本文言語English
ページ(範囲)573-576
ページ数4
ジャーナルJapanese journal of applied physics
47
1 PART 2
DOI
出版ステータスPublished - 2008 1 22

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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