Growth of atomically flat nanofilms and surface superstructures of intrinsic liquid alloys

Toshiro Yamanaka, Jian Li Wang, Tadaaki Nagao, Shin Yaginuma, Canhua Liu, Andrey V. Tupkalo, Toshio Sakurai

    研究成果: Article査読

    抄録

    Atomically flat nanofilms were formed during growth of Ga on a Si(111) surface using an In surfactant above the melting point of Ga (and In-Ga eutectic) throughout Ga coverages of 0.17 to 5 monolayers (0.17≤ Ga ≤5). Unique superstructures such as a quasisquare-lattice (QS) structure at Ga =3 to 4 and a 5×5 structure at Ga =5 appeared as Ga increased. The QS structure had Ga dimer layers similar to the square lattices of an alpha-Ga(100) plane but also maintained the 1×1 structure of Si(111). As dimer layers transformed into a monoatomic layer, QS transformed into a 5×5 structure that no longer has square features.

    本文言語English
    論文番号143116
    ジャーナルApplied Physics Letters
    92
    14
    DOI
    出版ステータスPublished - 2008

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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