Growth mode of CeO2 on Si surface

Toyohiro Chikyow, Lee Tye, Nadia A. El-Masry, Salah M. Bedair

研究成果: Conference contribution

2 被引用数 (Scopus)

抄録

The interface structure and electrical properties of CeO2Si (111) grown by laser ablation in ultra high vacuum was investigated by high resolution transmission electron microscopy, Auger electron spectroscopy and capacitance-voltage measurements. The deposited film was single crystalline CeO2, as indicated by RHEED and x-ray diffraction observations. However, during the deposition, a reaction between CeO2 and Si occurred at the interface. This reaction resulted in the formation of an oxygen deficient amorphous CeOx layer and a SiO2 layer. Post annealing in oxygen atmosphere caused the disappearance of the amorphous CeOx and the regrowth of crystalline CeO2. The SiO2 thickness was also increased by annealing. The modified structure of CeO2/SiO2Si showed a high break down voltage, compared with the as-deposited sample. From these results, a combination of CeO2 and SiO2 can have a great potential for SOI structure.

本文言語English
ホスト出版物のタイトルInterface Control of Electrical, Chemical, and Mechanical Properties
編集者Peter Borgesen, Klavs F. Jensen, Roger A. Pollak
出版社Publ by Materials Research Society
ページ551-556
ページ数6
ISBN(印刷版)1558992170
出版ステータスPublished - 1994 1 1
外部発表はい
イベントProceedings of the Fall 1993 MRS Meeting - Boston, MA, USA
継続期間: 1993 11 291993 12 3

出版物シリーズ

名前Materials Research Society Symposium Proceedings
318
ISSN(印刷版)0272-9172

Other

OtherProceedings of the Fall 1993 MRS Meeting
CityBoston, MA, USA
Period93/11/2993/12/3

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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