Growth mechanism of Y123 film by MOD-TFA process

Ryo Teranishi, Hiroshi Fuji, Tetsuji Honjo, Yuichi Nakamura, Teruo Izumi, Yuh Shiohara, Junko Shibata, Takahisa Yamamoto, Yuichi Ikuhara, Masahiro Yoshimura

    研究成果: Article査読

    46 被引用数 (Scopus)


    In order to clarify the growth mechanism of Y123 film in the metal organic deposition (MOD) process using TFA, transmission electron microscopy (TEM) observation of the quenched samples and measurement of the growth rate under several different conditions were carried out. TEM observation showed that the Y2Cu2O5, BaF2 and CuO are converted into Y123 by release of HF with supplying H2O at the reaction interface. The MOD-TFA process using the multi-coating method was applied to form thicker Y123 films on LaAlO3 substrates, and the growth mechanism for the Y123 crystallization was investigated. In order to evaluate the growth rate, the electrical resistance of the precursor films during the crystallization was measured by the DC four-probe method. It was observed that the thickness of the Y123 linearly increases with increasing annealing time. This result suggests that the growth rate is limited by the HF diffusion in the boundary layer and/or growing interface kinetics. According to the results from the gas flow rate dependence of the growth rate, it was suggested that the growth of Y123 films in this process might be limited by both the diffusion in boundary layer and the interface kinetics. Then, the growth model, which includes the two limiting systems, was developed. This model reveals a basic idea of the mechanism to determine the steady state growth rate.

    ジャーナルPhysica C: Superconductivity and its applications
    PART 2
    出版ステータスPublished - 2002 10月

    ASJC Scopus subject areas

    • 電子材料、光学材料、および磁性材料
    • 凝縮系物理学
    • エネルギー工学および電力技術
    • 電子工学および電気工学


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