Growth mechanism of thick c-axis oriented YBa2Cu3O7-y, films prepared by liquid phase epitaxy

T. Kitamura, S. Taniguchi, Y. Shiohara, I. Hirabayashi, S. Tanaka, Y. Sugawara, Y. Ikuhara

    研究成果: Article査読

    12 被引用数 (Scopus)

    抄録

    c-axis oriented YBa2Cu3O7-y (Y123) thick films were grown on NdGaO3(110) single crystalline substrates by liquid phase epitaxy (LPE). The growth mode of the film changes from a multi-nucleation growth to a spiral-step growth. The growth of the initial stage occurs due to the local supersaturation at the growth interface by the temperature difference between the substrate and the surface of the melt and the later stage growth is driven by the supersaturation from the transport of the solute through convection of the melt. The change of growth mode is also described as the change from the transient mode LPE (TMLE) growth to the steady state growth.

    本文言語English
    ページ(範囲)61-67
    ページ数7
    ジャーナルJournal of Crystal Growth
    158
    1-2
    DOI
    出版ステータスPublished - 1996 1

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Inorganic Chemistry
    • Materials Chemistry

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