Growth kinetics of thermal oxidation process on Si(100) by real time ultraviolet photoelectron spectroscopy

Y. Enta, Y. Takegawa, M. Suemitsu, N. Miyamoto

研究成果: Article査読

43 被引用数 (Scopus)

抄録

Initial thermal oxidation processes by dry oxygen within the first submonolayer on Si(100) have been investigated by real time ultraviolet photoelectron spectroscopy. For oxidation temperatures at 350-600°C the time evolution of the O 2p state intensity, a good measure for the amount of the formed oxide, presented a Langmuir-type adsorption behavior, showing a rapid increase after the introduction of the oxygen followed by a gradual saturation. For temperatures above 700°C, on the other hand, the onset of the oxidation was delayed, and the whole time evolution was well described by a model assuming a two-dimensional island growth. A unified explanation is given for this difference in the oxidation kinetics by considering the presence of the oxide decomposition process in the higher temperature region.

本文言語English
ページ(範囲)449-453
ページ数5
ジャーナルApplied Surface Science
100-101
DOI
出版ステータスPublished - 1996 7月
外部発表はい

ASJC Scopus subject areas

  • 化学 (全般)
  • 凝縮系物理学
  • 物理学および天文学(全般)
  • 表面および界面
  • 表面、皮膜および薄膜

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