Growth control of pentacene films on SiO2/Si substrates towards formation of flat conduction layers

Iwao Yagi, Kazuhito Tsukagoshi, Yoshinobu Aoyagi

研究成果: Article査読

19 被引用数 (Scopus)

抄録

The growth control of pentacene thin films on SiO2/Si substrates is investigated by focusing on the relationship between the grain structure and flatness of the film surface. Pentacene thin films showing various grain structures are reproducibly controlled by changing the evaporation flux rate and substrate temperature. Atomic force microscopy analysis of the film surface indicates that the surface roughness is strongly related to the growth condition. In addition, flat-topped grains grown layer by layer are obtained among controlled grain structures, and a maximum grain size of 25 μm 2 is obtained. The surface roughness significantly decreases for the flat-topped grain.

本文言語English
ページ(範囲)168-171
ページ数4
ジャーナルThin Solid Films
467
1-2
DOI
出版ステータスPublished - 2004 11月 22
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 表面および界面
  • 表面、皮膜および薄膜
  • 金属および合金
  • 材料化学

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