Growth conditions and morphology of GaN single crystals fabricated by the Na flux method

Masato Aoki, Hisanori Yamane, Masahiko Shimada, Seiji Sarayama, Francis J. Disalvo

研究成果: Article査読

12 被引用数 (Scopus)

抄録

Crystal growth of GaN was carried out by the Na flux method at 700-850°C and 1-5 MPa of N2 for 200 h. At higher temperatures and lower pressures, only Na-Ga intermetallic compounds are formed. At higher pressures or lower temperatures, the morphology of GaN single crystals depends on the experimental conditions. Hexagonal platelet crystals were obtained at lower temperature and higher N2 pressure, and hexagonal prismatic crystals grew at higher temperature and lower N2 pressure. Colorless transparent prismatic single crystals with a size of 1.0 × 0.5 × 0.5 mm3 were synthesized by slowly increasing the growth temperature at a rate of 0.5°C/h from 750 to 800°C under 3 MPa of N2.

本文言語English
ページ(範囲)858-862
ページ数5
ジャーナルJournal of the Ceramic Society of Japan
109
1274
DOI
出版ステータスPublished - 2001 10

ASJC Scopus subject areas

  • Ceramics and Composites
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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